Device Physics, Modeling, Technology, and Analysis for Silicon MESFET

This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the deriv...

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Detaylı Bibliyografya
Asıl Yazarlar: Amiri, Iraj Sadegh (Yazar), Mohammadi, Hossein (Yazar), Hosseinghadiry, Mahdiar (Yazar)
Müşterek Yazar: SpringerLink (Online service)
Materyal Türü: e-Kitap
Dil:İngilizce
Baskı/Yayın Bilgisi: Cham : Springer International Publishing : Imprint: Springer, 2019.
Edisyon:1st ed. 2019.
Konular:
Electronic circuits.
Electronics.
Electronic Circuits and Systems.
Electronics and Microelectronics, Instrumentation.
Online Erişim:Full-text access
OPAC'ta görüntüle
İçindekiler:
  • Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits
  • Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET
  • Chapter 3. Modeling of Classical SOI-MESFET
  • Chapter 4. Design and modeling of triple-material gate SOI-MESFET
  • Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET
  • Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices
  • Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs).

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