Epitaxial Growth of III-Nitride Compounds Computational Approach /

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretic...

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Detaylı Bibliyografya
Müşterek Yazar: SpringerLink (Online service)
Diğer Yazarlar: Matsuoka, Takashi (Editör), Kangawa, Yoshihiro (Editör)
Materyal Türü: e-Kitap
Dil:İngilizce
Baskı/Yayın Bilgisi: Cham : Springer International Publishing : 2018.
Imprint: Springer,
Edisyon:1st ed. 2018.
Seri Bilgileri:Springer Series in Materials Science, 269
Konular:
Optical materials.
Semiconductors.
Mathematical physics.
Surfaces (Technology).
Thin films.
Crystallography.
Optical Materials.
Theoretical, Mathematical and Computational Physics.
Surfaces, Interfaces and Thin Film.
Crystallography and Scattering Methods.
Online Erişim:Full-text access
Diğer Bilgiler
Özet:This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
Fiziksel Özellikler:IX, 223 p. 136 illus., 101 illus. in color. online resource.
ISBN:9783319766416
ISSN:2196-2812 ;
DOI:10.1007/978-3-319-76641-6

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