Epitaxial Growth of III-Nitride Compounds Computational Approach /

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretic...

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Bibliographic Details
Corporate Author: SpringerLink (Online service)
Other Authors: Matsuoka, Takashi (Editor), Kangawa, Yoshihiro (Editor)
Format: e-Book
Language:English
Published: Cham : Springer International Publishing : 2018.
Imprint: Springer,
Edition:1st ed. 2018.
Series:Springer Series in Materials Science, 269
Subjects:
Optical materials.
Semiconductors.
Mathematical physics.
Surfaces (Technology).
Thin films.
Crystallography.
Optical Materials.
Theoretical, Mathematical and Computational Physics.
Surfaces, Interfaces and Thin Film.
Crystallography and Scattering Methods.
Online Access:Full-text access
Description
Summary:This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
Physical Description:IX, 223 p. 136 illus., 101 illus. in color. online resource.
ISBN:9783319766416
ISSN:2196-2812 ;
DOI:10.1007/978-3-319-76641-6

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