Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficien...

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Bibliographic Details
Corporate Author: SpringerLink (Online service)
Other Authors: Meneghesso, Gaudenzio (Editor), Meneghini, Matteo (Editor), Zanoni, Enrico (Editor)
Format: e-Book
Language:English
Published: Cham : Springer International Publishing : 2018.
Imprint: Springer,
Edition:1st ed. 2018.
Series:Integrated Circuits and Systems,
Subjects:
Electronic circuits.
Optical materials.
Electronic Circuits and Systems.
Optical Materials.
Online Access:Full-text access
Table of Contents:
  • Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics
  • Chapter2: Lateral GaN HEMT structures
  • Chapter3: Vertical GaN Transistors for Power Electronics
  • Chapter4: Reliability of GaN-based Power devices
  • Chapter5: Validating GaN robustness
  • Chapter6: Impact of Parasitics on GaN Based Power Conversion
  • Chapter7: GaN in AC/DC Power Converters
  • Chapter8: GaN in Switched Mode Power Amplifiers.

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