Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficien...

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Detaylı Bibliyografya
Müşterek Yazar: SpringerLink (Online service)
Diğer Yazarlar: Meneghesso, Gaudenzio (Editör), Meneghini, Matteo (Editör), Zanoni, Enrico (Editör)
Materyal Türü: e-Kitap
Dil:İngilizce
Baskı/Yayın Bilgisi: Cham : Springer International Publishing : Imprint: Springer, 2018.
Edisyon:1st ed. 2018.
Seri Bilgileri:Integrated Circuits and Systems,
Konular:
Electronic circuits.
Optical materials.
Electronic Circuits and Systems.
Optical Materials.
Online Erişim:Full-text access
OPAC'ta görüntüle
İçindekiler:
  • Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics
  • Chapter2: Lateral GaN HEMT structures
  • Chapter3: Vertical GaN Transistors for Power Electronics
  • Chapter4: Reliability of GaN-based Power devices
  • Chapter5: Validating GaN robustness
  • Chapter6: Impact of Parasitics on GaN Based Power Conversion
  • Chapter7: GaN in AC/DC Power Converters
  • Chapter8: GaN in Switched Mode Power Amplifiers.

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