Research on the Radiation Effects and Compact Model of SiGe HBT

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique...

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Detaylı Bibliyografya
Yazar: Sun, Yabin (Yazar)
Müşterek Yazar: SpringerLink (Online service)
Materyal Türü: e-Kitap
Dil:İngilizce
Baskı/Yayın Bilgisi: Singapore : Springer Nature Singapore : Imprint: Springer, 2018.
Edisyon:1st ed. 2018.
Seri Bilgileri:Springer Theses, Recognizing Outstanding Ph.D. Research,
Konular:
Electronics.
Semiconductors.
Optical materials.
Electronic circuits.
Condensed matter.
Electronics and Microelectronics, Instrumentation.
Optical Materials.
Electronic Circuits and Systems.
Condensed Matter Physics.
Online Erişim:Full-text access
OPAC'ta görüntüle
Diğer Bilgiler
Özet:This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
Fiziksel Özellikler:XXIV, 168 p. 171 illus. online resource.
ISBN:9789811046124
ISSN:2190-5061
DOI:10.1007/978-981-10-4612-4

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