Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor

This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and...

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Bibliographic Details
Main Authors: Amiri, Iraj Sadegh (Author), Ghadiry, Mahdiar (Author)
Corporate Author: SpringerLink (Online service)
Format: e-Book
Language:English
Published: Singapore : Springer Nature Singapore : Imprint: Springer, 2018.
Edition:1st ed. 2018.
Series:SpringerBriefs in Applied Sciences and Technology,
Subjects:
Microtechnology.
Microelectromechanical systems.
Electronic circuits.
Nanotechnology.
Microsystems and MEMS.
Electronic Circuits and Systems.
Online Access:Full-text access
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Table of Contents:
  • Introduction on Scaling Issues of Conventional Semiconductors
  • Basic Concept of Field Effect Transistors
  • Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors
  • Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor
  • Conclusion and Futureworks on High Voltage Application of Graphene.

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