Nanoelectronic Materials and Devices Select Proceedings of ICNETS2, Volume III /

This book gathers a collection of papers by international experts that were presented at the International Conference on NextGen Electronic Technologies (ICNETS2-2016). ICNETS2 encompassed six symposia covering all aspects of the electronics and communications domains, including relevant nano/micro...

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Detaylı Bibliyografya
Müşterek Yazar: SpringerLink (Online service)
Diğer Yazarlar: Labbé, Christophe (Editör), Chakrabarti, Subhananda (Editör), Raina, Gargi (Editör), Bindu, B. (Editör)
Materyal Türü: e-Kitap
Dil:İngilizce
Baskı/Yayın Bilgisi: Singapore : Springer Nature Singapore : Imprint: Springer, 2018.
Edisyon:1st ed. 2018.
Seri Bilgileri:Lecture Notes in Electrical Engineering, 466
Konular:
Microtechnology.
Microelectromechanical systems.
Nanotechnology.
Nanoscience.
Microsystems and MEMS.
Nanophysics.
Online Erişim:Full-text access
OPAC'ta görüntüle
İçindekiler:
  • The Effect of Functionalized MWCNT on Mechanical and Electrical Properties of PMMA Nanocomposites
  • Performance Analysis of Dual-Metal Double-Gate Tunnel-Fets for Ultralow Power Applications
  • Films of Reduced Graphene Oxide based Metal Oxide Nanoparticles
  • Size optimization of InAs/GaAs quantum dots for longer storage memory applications
  • Design and Analysis of a CMOS 180 nm Fractional N Frequency Synthesizer
  • Memristor based Approximate Adders for Error Resilient Applications
  • Integrated Mems Capacitive Pressure Sensor with On-Chip CDC for a wide Operating Temperature Range
  • A High SNDR and Wider Signal Bandwidth CT ∑∆ Modulator with a Single Loop Non-linear Feedback Compensation
  • Design of Current Mode CNTFET Transceiver for Bundled Carbon Nanotube Interconnect
  • Weak Cell Detection Techniques for Memristor Based Memories
  • Enhancement of Transconductance using Multi-recycle Folded Cascode Amplifier
  • Nondestructive Read Circuit for Memristor based Memories
  • A Built in Self Repair Architecture for Random Access Memories
  • A Current Mode DC-DC Boost Converter with Fast Transient and on-chip Current Sensing Technique
  • A Modified GDI Based Low Power & High Read Stability 8T SRAM Memory with CNTFET Technology
  • High Performance Trench Gate Power MOSFET of Indium Phosphide
  • Memristor Equipped Error Detection Technique
  • 28nm FD-SOI SRAM Design using Read Stable Bit Cell Architecture
  • Design and Verification of Memory Controller with Host WISHBONE Interface
  • 8-Bit Asynchronous Wave-Pipelined Arithmetic-Logic Unit.

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