Emerging Resistive Switching Memories

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental...

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Detaylı Bibliyografya
Yazar: Ouyang, Jianyong (Yazar)
Müşterek Yazar: SpringerLink (Online service)
Materyal Türü: e-Kitap
Dil:İngilizce
Baskı/Yayın Bilgisi: Cham : Springer International Publishing : Imprint: Springer, 2016.
Edisyon:1st ed. 2016.
Seri Bilgileri:SpringerBriefs in Materials,
Konular:
Nanotechnology.
Electronic circuits.
Electronics.
Computer storage devices.
Memory management (Computer science).
Electronic Circuits and Systems.
Electronics and Microelectronics, Instrumentation.
Computer Memory Structure.
Online Erişim:Full-text access
OPAC'ta görüntüle
Diğer Bilgiler
Özet:This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
Fiziksel Özellikler:VIII, 93 p. 73 illus., 41 illus. in color. online resource.
ISBN:9783319315720
ISSN:2192-1105
DOI:10.1007/978-3-319-31572-0

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