Emerging Resistive Switching Memories

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental...

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Bibliographic Details
Main Author: Ouyang, Jianyong (Author)
Corporate Author: SpringerLink (Online service)
Format: e-Book
Language:English
Published: Cham : Springer International Publishing : Imprint: Springer, 2016.
Edition:1st ed. 2016.
Series:SpringerBriefs in Materials,
Subjects:
Nanotechnology.
Electronic circuits.
Electronics.
Computer storage devices.
Memory management (Computer science).
Electronic Circuits and Systems.
Electronics and Microelectronics, Instrumentation.
Computer Memory Structure.
Online Access:Full-text access
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Description
Summary:This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
Physical Description:VIII, 93 p. 73 illus., 41 illus. in color. online resource.
ISBN:9783319315720
ISSN:2192-1105
DOI:10.1007/978-3-319-31572-0

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