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Emerging Resistive Switching Memories
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental...
| Yazar: | Ouyang, Jianyong (Yazar) |
|---|---|
| Müşterek Yazar: | SpringerLink (Online service) |
| Materyal Türü: | e-Kitap |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
Cham :
Springer International Publishing : Imprint: Springer,
2016.
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| Edisyon: | 1st ed. 2016. |
| Seri Bilgileri: | SpringerBriefs in Materials,
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| Konular: | |
| Online Erişim: | Full-text access OPAC'ta görüntüle |
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