Emerging Resistive Switching Memories

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental...

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Detaylı Bibliyografya
Yazar: Ouyang, Jianyong (Yazar)
Müşterek Yazar: SpringerLink (Online service)
Materyal Türü: e-Kitap
Dil:İngilizce
Baskı/Yayın Bilgisi: Cham : Springer International Publishing : Imprint: Springer, 2016.
Edisyon:1st ed. 2016.
Seri Bilgileri:SpringerBriefs in Materials,
Konular:
Nanotechnology.
Electronic circuits.
Electronics.
Computer storage devices.
Memory management (Computer science).
Electronic Circuits and Systems.
Electronics and Microelectronics, Instrumentation.
Computer Memory Structure.
Online Erişim:Full-text access
OPAC'ta görüntüle
İçindekiler:
  • Introduction to history of memory devices and the present memory devices
  • Introduction of resistive switches memory devices with nanoparticles
  • Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode
  • Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode
  • Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles
  • Mechanisms for resistive switches
  • Application of the resistive switching devices with nanoparticles.

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