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Field-effect Self-mixing Terahertz Detectors
A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated el...
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| Müşterek Yazar: | |
| Materyal Türü: | e-Kitap |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
Berlin, Heidelberg :
Springer Berlin Heidelberg :
2016.
Imprint: Springer, |
| Edisyon: | 1st ed. 2016. |
| Seri Bilgileri: | Springer Theses, Recognizing Outstanding Ph.D. Research,
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| Konular: | |
| Online Erişim: | Full-text access |
| Özet: | A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques anddevice simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications. |
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| Fiziksel Özellikler: | XVIII, 126 p. 84 illus., 4 illus. in color. online resource. |
| ISBN: | 9783662486818 |
| ISSN: | 2190-5061 |
| DOI: | 10.1007/978-3-662-48681-8 |