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Impact of Ion Implantation on Quantum Dot Heterostructures and Devices
This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their...
Asıl Yazarlar: | , |
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Müşterek Yazar: | |
Materyal Türü: | e-Kitap |
Dil: | İngilizce |
Baskı/Yayın Bilgisi: |
Singapore :
Springer Nature Singapore :
2017.
Imprint: Springer, |
Edisyon: | 1st ed. 2017. |
Konular: | |
Online Erişim: | Full-text access |
İçindekiler:
- Preface
- Acknowledgement
- Contents
- List of Figures
- List of Tables
- Abbreviations
- Chapter 1: Introduction to Quantum Dots
- Chapter 2: Low energy ion implantation over single layer InAs/GaAs quantum dots
- Chapter 3: Optimizations for quaternary alloy (InAlGaAs) capped InAs/GaAs multilayer quantum dots
- Chapter 4: Effects of low energy light ion (H−) implantations on quaternary-alloy-capped InAs/GaAs quantum dot infrared photodetectors
- Chapter 5: Effects of low energy light ion (H−) implantation on quaternary-alloy-capped InGaAs/GaAs quantum dot infrared photodetectors.