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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficien...
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| Diğer Yazarlar: | , , |
| Materyal Türü: | e-Kitap |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
Cham :
Springer International Publishing :
2018.
Imprint: Springer, |
| Edisyon: | 1st ed. 2018. |
| Seri Bilgileri: | Integrated Circuits and Systems,
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| Konular: | |
| Online Erişim: | Full-text access |
| Özet: | This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies. |
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| Fiziksel Özellikler: | XIII, 232 p. 183 illus., 165 illus. in color. online resource. |
| ISBN: | 9783319779942 |
| ISSN: | 1558-9420 |
| DOI: | 10.1007/978-3-319-77994-2 |