Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor

This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and...

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Detaylı Bibliyografya
Asıl Yazarlar: Amiri, Iraj Sadegh (Yazar), Ghadiry, Mahdiar (Yazar)
Müşterek Yazar: SpringerLink (Online service)
Materyal Türü: e-Kitap
Dil:İngilizce
Baskı/Yayın Bilgisi: Singapore : Springer Nature Singapore : Imprint: Springer, 2018.
Edisyon:1st ed. 2018.
Seri Bilgileri:SpringerBriefs in Applied Sciences and Technology,
Konular:
Microtechnology.
Microelectromechanical systems.
Electronic circuits.
Nanotechnology.
Microsystems and MEMS.
Electronic Circuits and Systems.
Online Erişim:Full-text access
OPAC'ta görüntüle
İçindekiler:
  • Introduction on Scaling Issues of Conventional Semiconductors
  • Basic Concept of Field Effect Transistors
  • Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors
  • Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor
  • Conclusion and Futureworks on High Voltage Application of Graphene.

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