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3D TCAD Simulation for CMOS Nanoeletronic Devices
This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal-oxide-semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the buil...
| Asıl Yazarlar: | , |
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| Müşterek Yazar: | |
| Materyal Türü: | e-Kitap |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
Singapore :
Springer Nature Singapore :
2018.
Imprint: Springer, |
| Edisyon: | 1st ed. 2018. |
| Konular: | |
| Online Erişim: | Full-text access |
İçindekiler:
- Introduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools
- Simulation analysis of 2D MOSFET
- Simulation analysis of 3D FinFET with LG = 15 nm
- Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm
- Simulation analysis of GAA NWFET
- Simulation analysis of Junctionless FET with LG = 10 nm
- Simulation analysis of Tunnel FET
- Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm.