3D TCAD Simulation for CMOS Nanoeletronic Devices

This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal-oxide-semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the buil...

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Bibliographic Details
Main Authors: Wu, Yung-Chun (Author), Jhan, Yi-Ruei (Author)
Corporate Author: SpringerLink (Online service)
Format: e-Book
Language:English
Published: Singapore : Springer Nature Singapore : 2018.
Imprint: Springer,
Edition:1st ed. 2018.
Subjects:
Electronics.
Semiconductors.
Microtechnology.
Microelectromechanical systems.
Industrial engineering.
Production engineering.
Electronics and Microelectronics, Instrumentation.
Microsystems and MEMS.
Industrial and Production Engineering.
Online Access:Full-text access
Table of Contents:
  • Introduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools
  • Simulation analysis of 2D MOSFET
  • Simulation analysis of 3D FinFET with LG = 15 nm
  • Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm
  • Simulation analysis of GAA NWFET
  • Simulation analysis of Junctionless FET with LG = 10 nm
  • Simulation analysis of Tunnel FET
  • Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm.

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